Manufacturing method of micro light emitting diode structure

ABSTRACT

A manufacturing method of a micro light emitting diode structure includes: providing a first transfer stamp carrying a plurality of micro light emitting elements; providing a second transfer stamp carrying a plurality of light blocking structures, wherein each of the light blocking structures includes a light blocking layer and a light shielding layer disposed on the light blocking layer; providing a temporary substrate; transferring the micro light emitting elements onto the temporary substrate by the first transfer stamp; and transferring the light blocking structures onto the temporary substrate by the second transfer stamp. The micro light emitting elements and the light blocking structures are arranged alternately and fixed to the temporary substrate by connection layer. A reflectivity of the light blocking layer is greater than a reflectivity of the connection layer, and a Young&#39;s modulus of the light blocking layer is greater than a Young&#39;s modulus of the connection layer.

CROSS-REFERENCE TO RELATED APPLICATION

This application is a divisional application of and claims the prioritybenefit of a prior application Ser. No. 17/084,592, filed on Oct. 29,2020, now allowed, which claims the priority benefit of U.S. provisionalapplication Ser. No. 62/980,441, filed on Feb. 24, 2020, and Taiwanapplication no. 109116346, filed on May 18, 2020. The entirety of eachof the above-mentioned patent applications is hereby incorporated byreference herein and made a part of this specification.

BACKGROUND Technical Field

The disclosure relates to a light emitting structure, a manufacturingmethod thereof, and a device, and in particular relates to a micro lightemitting diode structure, a manufacturing method thereof, and a microlight emitting diode device.

Description of Related Art

When manufacturing the conventional micro light emitting diodestructure, generally the light blocking structure is manufactured afterthe micro light emitting diode is transferred onto the temporarysubstrate. As the fabrication of the light blocking structure involveslithography processes such as exposure, development, and etching, themicro light emitting diode that has been transferred onto the temporarysubstrate may be damaged easily. Besides, when the light blockingstructure is manufactured on the temporary substrate, the efficiency ofdevelopment and peeling may also be poor, which reduces the structuralreliability and results in low yield.

SUMMARY

The disclosure provides a micro light emitting diode structure which hasgood structural reliability.

The disclosure provides a manufacturing method for manufacturing theabove-described micro light emitting diode structure with goodproduction yield.

The disclosure also provides a micro light emitting diode device whichincludes the above-described micro light emitting diode structure andhas good display yield.

A micro light emitting diode structure of the disclosure includes: atemporary substrate; a plurality of micro light emitting elementsdisposed on the temporary substrate; a plurality of light blockingstructures disposed on the temporary substrate and arranged alternatelywith the micro light emitting elements, wherein each of the lightblocking structures includes a light blocking layer and a lightshielding layer disposed on the light blocking layer; and a connectionlayer. The micro light emitting elements and the light blockingstructures are fixed to the temporary substrate by the connection layer.A reflectivity of the light blocking layer is greater than areflectivity of the connection layer, and a Young's modulus of the lightblocking layer is greater than a Young's modulus of the connectionlayer.

In an embodiment of the disclosure, the reflectivity of the lightblocking layer is greater than a reflectivity of the light shieldinglayer, and the Young's modulus of the light blocking layer is greaterthan a Young's modulus of the light shielding layer.

In an embodiment of the disclosure, the Young's modulus of the lightshielding layer is greater than or equal to the Young's modulus of theconnection layer.

In an embodiment of the disclosure, the connection layer includes aplurality of connection parts separated from each other. The micro lightemitting elements and the light blocking layer of each of the lightblocking structures are respectively disposed on the connection parts,and the connection parts expose a part of the temporary substrate.

In an embodiment of the disclosure, the connection layer is a part of aplurality of fixing structures. The Young's modulus of the lightblocking layer is greater than a Young's modulus of the fixingstructures, and the Young's modulus of the fixing structures is greaterthan a Young's modulus of the light shielding layer.

In an embodiment of the disclosure, the fixing structures include aplurality of first fixing structures and a plurality of second fixingstructures. Each of the first fixing structures covers the lightshielding layer and extends from an edge of the light shielding layer tocover an edge of the light blocking layer and is connected to thetemporary substrate. A first air gap is provided between the lightblocking layer and the temporary substrate. Each of the second fixingstructures covers the respective micro light emitting element andextends from an edge of the respective micro light emitting element andis connected to the temporary substrate. A second air gap is providedbetween the respective micro light emitting element and the temporarysubstrate.

In an embodiment of the disclosure, an edge of the light shielding layeris aligned with an edge of the light blocking layer.

In an embodiment of the disclosure, a width of the light blocking layergradually increases in a direction from the light shielding layer towardthe temporary substrate, and a width of each of the micro light emittingelements gradually increases from the temporary substrate toward adirection away from the temporary substrate.

In an embodiment of the disclosure, a first height of each of the lightblocking structures is greater than or equal to a second height of eachof the micro light emitting elements.

In an embodiment of the disclosure, a third height of the light blockinglayer is greater than or equal to the second height of each of the microlight emitting elements.

In an embodiment of the disclosure, the light blocking structuresfurther include a plurality of light blocking connection layers, andeach of the light blocking connection layers connects each of the microlight emitting elements and the light blocking layers located on twoopposite sides of each of the micro light emitting elements.

In an embodiment of the disclosure, the light blocking layer has a roughperipheral surface.

A micro light emitting diode device of the disclosure includes: acircuit substrate; a plurality of micro light emitting elements disposedon the circuit substrate; a plurality of light blocking structuresdisposed on the circuit substrate and arranged alternately with themicro light emitting elements, wherein each of the light blockingstructures includes a light blocking layer and a light shielding layerdisposed on the light blocking layer; and a connection layer. The lightblocking structures are fixed to the circuit substrate by the connectionlayer. A reflectivity of the light blocking layer is greater than areflectivity of the connection layer, and a Young's modulus of the lightblocking layer is greater than a Young's modulus of the connectionlayer.

In an embodiment of the disclosure, the reflectivity of the lightblocking layer is greater than a reflectivity of the light shieldinglayer, and the Young's modulus of the light blocking layer is greaterthan a Young's modulus of the light shielding layer.

In an embodiment of the disclosure, the micro light emitting diodedevice further includes: a plurality of light guide layers at leastdisposed on the light shielding layer. An edge of each of the lightguide layers is aligned with or smaller than an edge of thecorresponding light shielding layer.

In an embodiment of the disclosure, the connection layer includes aplurality of connection parts. The connection parts are respectivelylocated between the light blocking structures and the circuit substrate,and the Young's modulus of the light blocking layer is greater than aYoung's modulus of the connection part.

In an embodiment of the disclosure, an orthographic projection area ofeach of the connection parts on the circuit substrate is greater than anorthographic projection area of each of the light blocking structures onthe circuit substrate.

In an embodiment of the disclosure, the connection layer includes aplurality of pad parts, and the light blocking structures furtherinclude a plurality of light blocking connection layers. Each of thelight blocking connection layers connects each of the micro lightemitting elements and the light blocking layers located on two oppositesides of each of the micro light emitting elements. Each of the padparts is located between the light blocking connection layer and thecircuit substrate, and the micro light emitting elements areelectrically connected to the circuit substrate through the pad parts.

In an embodiment of the disclosure, the connection layer is ananisotropic conductive film (ACF) layer.

In an embodiment of the disclosure, each of the light blockingstructures is inclined at an angle with respect to an extendingdirection of the circuit substrate, and maximum distances from each ofthe micro light emitting elements to the light blocking structureslocated on two opposite sides are different.

In an embodiment of the disclosure, the micro light emitting diodedevice further includes: a light conversion layer connecting the lightblocking structures and covering the micro light emitting elements. Agap is provided between the light conversion layer and the circuitsubstrate.

A manufacturing method of a micro light emitting diode structureaccording to the disclosure includes: providing a first transfer stampcarrying a plurality of micro light emitting elements separated fromeach other; providing a second transfer stamp carrying a plurality oflight blocking structures separated from each other, wherein each of thelight blocking structures includes a light blocking layer and a lightshielding layer disposed on the light blocking layer; providing atemporary substrate; transferring the micro light emitting elements ontothe temporary substrate by the first transfer stamp; and transferringthe light blocking structures onto the temporary substrate by the secondtransfer stamp. The micro light emitting elements and the light blockingstructures are arranged alternately and fixed to the temporary substrateby a connection layer. A reflectivity of the light blocking layer isgreater than a reflectivity of the connection layer, and a Young'smodulus of the light blocking layer is greater than a Young's modulus ofthe connection layer.

In an embodiment of the disclosure, the step of carrying the lightblocking structures on the second transfer stamp includes: forming alight blocking material layer; forming a light shielding material layeron the light blocking material layer; performing a singulation processon the light blocking material layer and the light shielding materiallayer to form the light blocking structures; and arranging the lightblocking structures in a matrix on the second transfer stamp.

In an embodiment of the disclosure, the singulation process includes anetching method or a splitting method.

In an embodiment of the disclosure, the micro light emitting elementsare transferred onto the temporary substrate by the first transfer stampafter the light blocking structures are transferred onto the temporarysubstrate by the second transfer stamp.

In an embodiment of the disclosure, the light blocking structuresfurther include a plurality of light blocking connection layers, andeach of the light blocking connection layers connects each of the microlight emitting elements and the light blocking layers located on twoopposite sides of each of the micro light emitting elements.

In an embodiment of the disclosure, the connection layer is a part of aplurality of fixing structures. The fixing structures include aplurality of first fixing structures and a plurality of second fixingstructures. Each of the first fixing structures covers the lightshielding layer and extends from an edge of the light shielding layer tocover an edge of the light blocking layer and is connected to thetemporary substrate. A first air gap is provided between the lightblocking layer and the temporary substrate. Each of the second fixingstructures covers the respective micro light emitting element andextends from an edge of the respective micro light emitting element andis connected to the temporary substrate. A second air gap is providedbetween the respective micro light emitting element and the temporarysubstrate.

In an embodiment of the disclosure, the light blocking structures aretransferred onto the temporary substrate by the second transfer stampafter the micro light emitting elements are transferred onto thetemporary substrate by the first transfer stamp, and a first height ofeach of the light blocking structures is greater than or equal to asecond height of each of the micro light emitting elements.

Based on the above, in the manufacturing process of the micro lightemitting diode structure of the disclosure, the fabricated lightblocking structures and the micro light emitting elements arerespectively transferred onto the temporary substrate, so as to obtaingood process yield. As a result, the manufactured micro light emittingdiode structure also has good structural reliability. In addition, withuse of the micro light emitting diode structure of the disclosure, gooddisplay yield is achieved.

In order to make the above-mentioned features and advantages of thedisclosure more understandable, exemplary embodiments are described indetail hereinafter with reference to the accompanying drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

The accompanying drawings are included to provide a furtherunderstanding of the disclosure, and are incorporated in and constitutea part of this specification. The drawings illustrate exemplaryembodiments of the disclosure and, together with the description, serveto explain the principles of the disclosure.

FIG. 1A to FIG. 1G are schematic views showing a manufacturing method ofa micro light emitting diode structure according to an embodiment of thedisclosure.

FIG. 2A to FIG. 2D are schematic partial cross-sectional views showingvarious micro light emitting diode structures according to embodimentsof the disclosure.

FIG. 3A to FIG. 3H are schematic partial cross-sectional views showingvarious micro light emitting diode devices according to embodiments ofthe disclosure.

DETAILED DESCRIPTION OF DISCLOSED EMBODIMENTS

FIG. 1A to FIG. 1G are schematic views showing a manufacturing method ofa micro light emitting diode structure according to an embodiment of thedisclosure. To facilitate the description, FIG. 1B, FIG. 1C, and FIG. 1Eare top views, and FIG. 1A, FIG. 1D, FIG. 1F, and FIG. 1G are partialcross-sectional views.

First, referring to FIG. 1A, in the manufacturing method of the microlight emitting diode structure according to the present embodiment,firstly, a first transfer stamp 10 is provided. The first transfer stamp10 carries thereon a plurality of micro light emitting elements 120separated from each other. Preferably, the micro light emitting elements120 may be arranged in a matrix on the first transfer stamp 10, but thedisclosure is not limited thereto. Herein, the micro light emittingelement 120 is, for example, a micro light emitting diode (Micro LED). Amaximum size of the micro light emitting element 120 is smaller than orequal to 100 microns, and the thickness of the micro light emittingelement 120 is smaller than or equal to 15 microns, so as tosubsequently transfer, integrate, and assemble the micro light emittingelement 120 to a heterogeneous integrated system, including substratesof various sizes such as a micro display and a large-area display.Nevertheless, the disclosure is not limited thereto.

Next, referring to FIG. 1F, a second transfer stamp 20 is provided. Thesecond transfer stamp 20 carries thereon a plurality of light blockingstructures 130 separated from each other. Each light blocking structure130 includes a light blocking layer 132 and a light shielding layer 134disposed on the light blocking layer 132. Specifically, regarding thestep of disposing the light blocking structure 130 on the secondtransfer stamp 20, first, referring to FIG. 1B, a light blockingmaterial layer 132 a is formed. Herein, the light blocking materiallayer 132 a is a reflective material and has a reflectivity greater than80%, for example. The light blocking material layer 132 a is, forexample, a ceramic material, a metal material, or a colloid containingmetal particles, but the disclosure is not limited thereto. The lightblocking material layer 132 a may also be a light absorbing material andhas a light absorption rate greater than 80%, for example, but thedisclosure is not limited thereto. Next, referring to FIG. 1C, a lightshielding material layer 134 a is formed on the light blocking materiallayer 132 a. A material of the light shielding material layer 134 a is alight absorbing material and has a light absorption rate greater than80%, for example. The light shielding material layer 134 a is, forexample, a dark-colored light absorbing structure, including aresin-based black structure, a metal black structure, a graphite blackstructure, carbon black, a nitride combination, or an oxide combination,which blocks light that is not blocked by the light blocking materiallayer 132 a so as to prevent the adjacent micro light emitting elements120 (referring to FIG. 1G) from affecting each other and generatingcross talk. Herein, the step of forming the light shielding materiallayer 134 a is, for example, performed by a coating method or a printingmethod, but the disclosure is not limited thereto. Then, referring toFIG. 1D, a singulation process is performed on the light blockingmaterial layer 132 a and the light shielding material layer 134 a toform the plurality of light blocking structures 130 along a cutting lineC. Here, the singulation process includes an etching method or asplitting method. The thickness of the light shielding layer 134 isgreater than the thickness of the light blocking layer 132. Thereafter,referring to FIG. 1F, the light blocking structures 130 are arranged ina matrix on the second transfer stamp 20. The light shielding layer 134is located between the second transfer stamp 20 and the light blockinglayer 132.

Finally, referring to FIG. 1A, FIG. 1F, and FIG. 1G, a temporarysubstrate 110 is provided. The temporary substrate 110 is, for example,a non-circuit substrate such as a plastic substrate, a glass substrate,or a sapphire substrate, but the disclosure is not limited thereto. Theplurality of micro light emitting elements 120 are transferred onto thetemporary substrate 110 by the first transfer stamp 10. The plurality oflight blocking structures 130 are transferred onto the temporarysubstrate 110 by the second transfer stamp 20. In the presentembodiment, the micro light emitting elements 120 and the light blockingstructures 130 are respectively mass-transferred onto the temporarysubstrate 110 by two times of mass transfer. Nevertheless, thedisclosure is not intended to limit the order in which the micro lightemitting elements 120 and the light blocking structures 130 aremass-transferred onto the temporary substrate 110. As shown in FIG. 1G,the micro light emitting elements 120 and the light blocking structures130 are arranged alternately and fixed to the temporary substrate 110 bya connection layer 140. Herein, the reflectivity of the light blockinglayer 132 is greater than the reflectivity of the connection layer 140,and the Young's modulus of the light blocking layer 132 is greater thanthe Young's modulus of the connection layer 140.

More specifically, the connection layer 140 of the present embodiment isembodied as an organic material, and the micro light emitting element120 and the light blocking layer 132 of the light blocking structure 130may be fixed to the temporary substrate 110 by the connection layer 140.Herein, the connection layer 140 is an entire layer and continuouslycovers the temporary substrate 110. In particular, a first height H1 ofeach light blocking structure 130 is greater than or equal to a secondheight H2 of each micro light emitting element 120. Preferably, thefirst height H1 of each light blocking structure 130 is greater than thesecond height H2 of each micro light emitting element 120, and the ratioof H2/H1 is between 0.5 and 1. If the above ratio is too small, light isblocked, which causes obvious streaks during display. Furthermore, athird height H3 of each light blocking layer 132 is greater than orequal to the second height H2 of each micro light emitting element 120,and the ratio of H2/H3 is between 0.8 and 1. If the above ratio is toosmall, light is blocked, which causes obvious streaks during display.With the design of different heights, the light blocking structure 130effectively reflects the lateral light of the micro light emittingelement 120 to the front surface without blocking the light. Since thefirst height H1 of the light blocking structure 130 is greater than thesecond height H2 of the micro light emitting element 120, preferably,the light blocking structures 130 may be transferred to the top of thetemporary substrate 110 by the second transfer stamp 20 before the microlight emitting elements 120 are transferred onto the temporary substrate110 by the first transfer stamp 10. That is to say, the micro lightemitting elements 120 are mass-transferred onto the temporary substrate110 after the light blocking structures 130 are mass-transferred ontothe temporary substrate 110, so as to obtain good process yield.

In terms of structure, referring to FIG. 1G, the micro light emittingdiode structure 100 includes the temporary substrate 110, the pluralityof micro light emitting elements 120, the plurality of light blockingstructures 130, and the connection layer 140. The micro light emittingelements 120 are disposed on the temporary substrate 110. The lightblocking structures 130 are disposed on the temporary substrate 110 andarranged alternately with the micro light emitting elements 120. Eachlight blocking structure 130 includes the light blocking layer 132 andthe light shielding layer 134 disposed on the light blocking layer 132.An edge of the light shielding layer 134 is aligned with an edge of thelight blocking layer 132. The micro light emitting elements 120 and thelight blocking structures 130 are fixed to the temporary substrate 110by the connection layer 140. The reflectivity of the light blockinglayer 132 is greater than the reflectivity of the connection layer 140,and the reflectivity of the light blocking layer 132 is greater than thereflectivity of the light shielding layer 134, so that the lightblocking layers 132 on two sides of the micro light emitting element 120effectively reflect the lateral light of the micro light emittingelement 120. Herein, the connection layer 140 is an entire layer and acontinuous adhesive layer. Preferably, the Young's modulus of the lightblocking layer 132 is greater than the Young's modulus of the microlight emitting element 120, the Young's modulus of the micro lightemitting element 120 is greater than the Young's modulus of the lightshielding layer 134, and the Young's modulus of the light shieldinglayer 134 is greater than or equal to the Young's modulus of theconnection layer 140. As the connection layer 140 has the smallestYoung's modulus, the connection layer 140 may serve as a buffer duringthe mass transfer of the micro light emitting elements 120 and the lightblocking structures 130.

It is noted here that the following embodiments will be described withreference to the reference numerals and part of the contents of theforegoing embodiments, wherein the same reference numerals are used toindicate the same or similar elements, and the description of the sametechnical contents is omitted. Please refer to the foregoing embodimentsfor the description of the omitted contents, which will not be repeatedhereinafter.

FIG. 2A is a schematic partial cross-sectional view of a micro lightemitting diode structure according to an embodiment of the disclosure.Referring to FIG. 1G and FIG. 2A, the micro light emitting diodestructure 100 a of the present embodiment is similar to the micro lightemitting diode structure 100 of FIG. 1G, and the difference between thetwo structures is that: the connection layer 140 a of the presentembodiment is embodied as including a plurality of connection parts 142a separated from each other. The micro light emitting element 120 andthe light blocking layer 132 of each light blocking structure 130 arerespectively disposed on the connection part 142 a. The connection parts142 a expose a part of the temporary substrate 110. Herein, anorthographic projection area of the connection part 142 a on thetemporary substrate 110 is greater than an orthographic projection areaof the micro light emitting element 120 on the temporary substrate 110and an orthographic projection area of the light blocking structure 130on the temporary substrate 110, so as to increase the yield of transfer.

FIG. 2B is a schematic partial cross-sectional view of a micro lightemitting diode structure according to an embodiment of the disclosure.Referring to FIG. 2A and FIG. 2B, the micro light emitting diodestructure 100 b of the present embodiment is similar to the micro lightemitting diode structure 100 a of FIG. 2A, and the difference betweenthe two structures is that: the light blocking layer 132 b of the lightblocking structure 130 b of the present embodiment has a roughperipheral surface 133 b. The rough peripheral surface 133 b is, forexample, formed by a singulation process using a splitting method, so asto increase reflection. Herein, the width of the light blocking layer132 b gradually increases in the direction from the light shieldinglayer 134 toward the temporary substrate 110, and the width of eachmicro light emitting element 120 b gradually increases from thetemporary substrate 110 toward the direction away from the temporarysubstrate 110. In other words, the cross-sectional shape of the lightblocking layer 132 b is a positive trapezoid, and the cross-sectionalshape of the micro light emitting element 120 b is an invertedtrapezoid, so as to concentrate light.

FIG. 2C is a schematic partial cross-sectional view of a micro lightemitting diode structure according to an embodiment of the disclosure.Referring to FIG. 1G and FIG. 2C, the micro light emitting diodestructure 100 c of the present embodiment is similar to the micro lightemitting diode structure 100 of FIG. 1G, and the difference between thetwo structures is that: the light blocking structure 130 c of thepresent embodiment further includes a plurality of light blockingconnection layers 136. Each light blocking connection layer 136 connectseach micro light emitting element 120 and the light blocking layer 132on two opposite sides of the micro light emitting element 120. In otherwords, the light blocking connection layer 136 is located under themicro light emitting element 120. Therefore, the micro light emittingelements 120 are mass-transferred onto the temporary substrate 110 afterthe light blocking structures 130 c are mass-transferred onto thetemporary substrate 110. That is, the light blocking structures 130 aretransferred onto the temporary substrate 110 by the second transferstamp 20 after the micro light emitting elements 120 are transferredonto the temporary substrate 110 by the first transfer stamp Herein, thelight blocking connection layer 136 may be integrally formed with thelight blocking layer 132. That is, the light blocking connection layer136 and the light blocking layer 132 have the same material, but thedisclosure is not limited thereto.

FIG. 2D is a schematic partial cross-sectional view of a micro lightemitting diode structure according to an embodiment of the disclosure.Referring to FIG. 1G and FIG. 2D, the micro light emitting diodestructure 100 d of the present embodiment is similar to the micro lightemitting diode structure 100 of FIG. 1G, and the difference between thetwo structures is that: the connection layer of the present embodimentis embodied as a part of a plurality of fixing structures 140 d.Specifically, the fixing structures 140 d include a plurality of firstfixing structures 142 d and a plurality of second fixing structures 144d. Each first fixing structure 142 d covers the light shielding layer134, and extends from an edge of the light shielding layer 134 to coveran edge of the light blocking layer 132 and is connected to thetemporary substrate 110. A first air gap A1 is provided between thelight blocking layer 132 and the temporary substrate 110. Each secondfixing structure 144 d covers the micro light emitting element 120, andextends from an edge of the micro light emitting element 120 and isconnected to the temporary substrate 110. A second air gap A2 isprovided between the micro light emitting element 120 and the temporarysubstrate 110. In other words, the light blocking structure 130 and themicro light emitting element 120 do not directly contact the temporarysubstrate 110, but indirectly contact the temporary substrate 110through a part of the first fixing structure 142 d and a part of thesecond fixing structure 144 d.

Preferably, the Young's modulus of the light blocking layer 132 isgreater than the Young's modulus of the fixing structure 140 d, and theYoung's modulus of the fixing structure 140 d is greater than theYoung's modulus of the light shielding layer 134, so as to provide goodprotection for the fixing structure 140 d. Herein, the material of thefixing structure 140 d is, for example, silicon dioxide, siliconnitride, silicon oxide glass (SOG), or other suitable inorganicmaterials, or may be a conductive material, so that the fixing structure140 d remaining on the surface of the micro light emitting element 120after the subsequent transfer may serve as an electrode of a verticalmicro element or as a common electrode. Nevertheless, the disclosure isnot limited thereto.

FIG. 3A is a schematic partial cross-sectional view of a micro lightemitting diode device according to an embodiment of the disclosure.Referring to FIG. 3A, the micro light emitting diode device 200 a of thepresent embodiment includes a circuit substrate 210, a plurality ofmicro light emitting elements 120, a plurality of light blockingstructures 130, and a connection layer 220 a. Herein, the micro lightemitting elements 120 and the light blocking structures 130 aremass-transferred from the temporary substrate 110 (referring to FIG. 1G)onto the circuit substrate 210 by one time or two times of masstransfer. The circuit substrate 210 is, for example, a complementarymetal-oxide-semiconductor (CMOS) substrate, a liquid crystal on silicon(LCOS) substrate, a thin film transistor (TFT) substrate, or othersubstrates with a working circuit, but the disclosure is not limitedthereto. The micro light emitting elements 120 and the light blockingstructures 130 are disposed on the circuit substrate 210, and the lightblocking structures 130 and the micro light emitting elements 120 arearranged alternately with each other. The micro light emitting element120 is electrically connected to the circuit substrate 210 through theconnection layer 220 a, and the light blocking structure 130 is fixed tothe circuit substrate 210 through the connection layer 220 a.

Furthermore, the connection layer 220 a of the present embodimentincludes a plurality of electrical pads 222 a and a plurality ofconnection parts 224 a. The electrical pads 222 a are respectivelylocated between the micro light emitting elements 120 and the circuitsubstrate 210, so as to electrically connect the micro light emittingelements 120 and the circuit substrate 210. The connection parts 224 aare respectively located between the light blocking structures 130 andthe circuit substrate 210, so as to connect and fix the light blockingstructures 130 to the circuit substrate 210. Herein, the material of theelectrical pad 222 a is different from the material of the connectionpart 224 a. The material of the electrical pad 222 a is, for example, aconductive material such as metal or metal oxide, and the material ofthe connection part 224 a is, for example, an organic material, but thedisclosure is not limited thereto.

Herein, as shown in FIG. 3A, an orthographic projection area of eachconnection part 224 a on the circuit substrate 210 is greater than anorthographic projection area of each light blocking structure 130 on thecircuit substrate 210, so as to achieve good bonding reliability.Similarly, an orthographic projection area of each electrical pad 222 aon the circuit substrate 210 is greater than an orthographic projectionarea of each micro light emitting element 120 on the circuit substrate210, so that the micro light emitting element 120 has a larger bondingarea to improve the bonding reliability. In addition, the Young'smodulus of the light blocking layer 132 of the present embodiment isgreater than the Young's modulus of the connection layer 220 a, so as toprovide good buffering capacity when bonding the light blocking layer132 to the connection layer. The light absorption rate of the lightshielding layer 134 is greater than the light absorption rate of thelight blocking layer 132, and the reflectivity of the light blockinglayer 132 is greater than the reflectivity of the light shielding layer134 and the reflectivity of the connection layer 220 a, so as toeffectively reflect the lateral light of the micro light emittingelements 120 on two sides of the light blocking layer 132 to the frontsurface, and absorb the stray light above the micro light emittingelements 120 to prevent cross talk.

FIG. 3B is a schematic partial cross-sectional view of a micro lightemitting diode device according to an embodiment of the disclosure.Referring to FIG. 3B and FIG. 3A, the micro light emitting diode device200 b of the present embodiment is similar to the micro light emittingdiode device 200 a of FIG. 3B, and the difference between the twodevices is that: the micro light emitting diode device 200 b of thepresent embodiment further includes a plurality of light guide layers230 a disposed on the light shielding layers 134. An edge of each lightguide layer 230 a is aligned with or smaller than an edge of thecorresponding light shielding layer 134. Herein, the light guide layer230 a is the remaining part after the first fixing structure 142 d ofFIG. 2D is transferred to the circuit substrate 210, and may adjust thelateral light of the micro light emitting element 120 without blockingthe light emitted by the micro light emitting element 120.

FIG. 3C is a schematic partial cross-sectional view of a micro lightemitting diode device according to an embodiment of the disclosure.Referring to FIG. 3B and FIG. 3C, the micro light emitting diode device200 c of the present embodiment is similar to the micro light emittingdiode device 200 b of FIG. 3B, and the difference between the twodevices is that: the micro light emitting diode device 200 c of thepresent embodiment further includes a plurality of light guide layers230 b in addition to the light guide layers 230 a. The light guide layer230 b is disposed on the micro light emitting element 120, and an edgeof the light guide layer 230 b is aligned with or smaller than an edgeof the micro light emitting element 120. Herein, the light guide layer230 b is the remaining part after the second fixing structure 144 d ofFIG. 2D is transferred to the circuit substrate 210, and may be used toconcentrate the forward light of the micro light emitting element 120.

FIG. 3D is a schematic partial cross-sectional view of a micro lightemitting diode device according to an embodiment of the disclosure.Referring to FIG. 3A and FIG. 3D, the micro light emitting diode device200 d of the present embodiment is similar to the micro light emittingdiode device 200 a of FIG. 3A, and the difference between the twodevices is that: the connection layer 220 d of the present embodimentincludes a plurality of pad parts 222 d. The pad parts 222 d areseparated from each other and expose a part of the circuit substrate210. The light blocking structure 130 c further includes a plurality oflight blocking connection layers 136. Each light blocking connectionlayer 136 connects each micro light emitting element 120 and the lightblocking layers 132 on two opposite sides of the micro light emittingelement 120. That is, the micro light emitting element 120 is locatedabove the light blocking connection layer 136, and each pad part 222 dis located between each light blocking connection layer 136 and thecircuit substrate 210. Preferably, a circuit may be manufactured on thelight blocking connection layer 136, such as a conductive through holeand a conductive via, so that the micro light emitting element 120 onthe light blocking connection layer 136 may be electrically connected tothe circuit substrate 210 through the pad part 222 d below. When thelight blocking layer 132 is a conductive structure, the vertical microlight emitting element 120 may also be directly electrically connectedto the circuit substrate 210 through the light blocking layer 132 andthe pad part 222 d below, so as to increase the transfer bonding yieldand alignment accuracy.

FIG. 3E is a schematic partial cross-sectional view of a micro lightemitting diode device according to an embodiment of the disclosure.Referring to FIG. 3A and FIG. 3E, the micro light emitting diode device200 e of the present embodiment is similar to the micro light emittingdiode device 200 a of FIG. 3A, and the difference between the twodevices is that: the connection layer of the present embodiment isembodied as an anisotropic conductive film layer 220 e, which belongs toa low-temperature conductive adhesive layer. During transfer bonding,the micro light emitting element 120 is electrically connected to thecircuit substrate 210 through the conductive particles in theanisotropic conductive film layer 220 e, and the micro light emittingelement 120 and the light blocking structure 130 are fixed to thecircuit substrate 210 through the colloid in the anisotropic conductivefilm layer 220 e, which increases the transfer bonding yield andalignment tolerance without an additional high-temperature andhigh-pressure bonding process and alignment accuracy.

FIG. 3F is a schematic partial cross-sectional view of a micro lightemitting diode device according to an embodiment of the disclosure.Referring to FIG. 3A and FIG. 3F, the micro light emitting diode device200 f of the present embodiment is similar to the micro light emittingdiode device 200 a of FIG. 3A, and the difference between the twodevices is that: each light blocking structure 130 f of the presentembodiment is inclined at an angle α with respect to an extendingdirection E of the circuit substrate 210. In other words, in the presentembodiment, the light blocking structure 130 f including the lightblocking layer 132 f and the light shielding layer 134 f has aninclination angle. The inclination angle is smaller than or equal to 90degrees and greater than or equal to 45 degrees. The slight inclinationand intersection reduce the streaks between pixels during display.Therefore, the light blocking structures 130 f of the present embodimentmay have different heights. In addition, the maximum distances d1 and d2from the micro light emitting element 120 of the present embodiment tothe light blocking structures 130 f on two opposite sides (such as theleft and right sides) are also different.

FIG. 3G is a schematic partial cross-sectional view of a micro lightemitting diode device according to an embodiment of the disclosure.Referring to FIG. 3A and FIG. 3G, the micro light emitting diode device200 g of the present embodiment is similar to the micro light emittingdiode device 200 a of FIG. 3A, and the difference between the twodevices is that: in the present embodiment, the micro light emittingdiode device 200 g further includes a light conversion layer 240. Thelight conversion layer 240 connects the light blocking structures 130and covers the micro light emitting elements 120, so as to improve thelight emitting efficiency of the micro light emitting elements 120 andserve as a connection during transfer to prevent displacement. Here, thelight conversion layer 240 is aligned with the outer surface of thelight shielding layer 134, but the disclosure is not limited thereto. Inaddition, a gap G is provided between the light conversion layer 240 andthe circuit substrate 210. The gap G may be an air gap, for example, toincrease the buffering capacity for overflow during bonding.

FIG. 3H is a schematic partial cross-sectional view of a micro lightemitting diode device according to an embodiment of the disclosure.Referring to FIG. 3A and FIG. 3H, the micro light emitting diode device200 h of the present embodiment is similar to the micro light emittingdiode device 200 a of FIG. 3A, and the difference between the twodevices is that: the connection layer 220 h of the present embodimentincludes a plurality of electrical pads 222 h and a plurality ofconnection parts 224 h. The electrical pads 222 h are respectivelylocated between the micro light emitting elements 120 and the circuitsubstrate 210, and the connection parts 224 h are respectively locatedbetween the light blocking structures 130 and the circuit substrate 210.The connection part 224 h extends to cover a peripheral surface 133 ofthe light blocking layer 132 of the light blocking structure 130, whichincreases the adhesion between the light blocking structure 130 and thecircuit substrate 210.

In summary, in the manufacturing process of the micro light emittingdiode structure of the disclosure, the fabricated light blockingstructures and the micro light emitting elements are respectivelytransferred onto the temporary substrate, so as to obtain good processyield. As a result, the manufactured micro light emitting diodestructure also has good structural reliability. In addition, with use ofthe micro light emitting diode structure of the disclosure, good displayyield is achieved.

Although the disclosure has been described with reference to the aboveembodiments, the embodiments are not intended to limit the disclosure. Aperson of ordinary skill in the art may make variations andmodifications without departing from the spirit and scope of thedisclosure. Therefore, the protection scope of the disclosure is definedby the appended claims.

What is claimed is:
 1. A manufacturing method of a micro light emittingdiode structure, comprising: providing a first transfer stamp carrying aplurality of micro light emitting elements separated from each other;providing a second transfer stamp carrying a plurality of light blockingstructures separated from each other, wherein each of the light blockingstructures comprises a light blocking layer and a light shielding layerdisposed on the light blocking layer; providing a temporary substrate;transferring the micro light emitting elements onto the temporarysubstrate by the first transfer stamp; and transferring the lightblocking structures onto the temporary substrate by the second transferstamp, wherein the micro light emitting elements and the light blockingstructures are arranged alternately and fixed to the temporary substrateby a connection layer, a reflectivity of the light blocking layer isgreater than a reflectivity of the connection layer, and a Young'smodulus of the light blocking layer is greater than a Young's modulus ofthe connection layer.
 2. The manufacturing method of the micro lightemitting diode structure according to claim 1, wherein carrying thelight blocking structures on the second transfer stamp comprises:forming a light blocking material layer; forming a light shieldingmaterial layer on the light blocking material layer; performing asingulation process on the light blocking material layer and the lightshielding material layer to form the light blocking structures; andarranging the light blocking structures in a matrix on the secondtransfer stamp.
 3. The manufacturing method of the micro light emittingdiode structure according to claim 2, wherein the singulation processcomprises an etching method or a splitting method.
 4. The manufacturingmethod of the micro light emitting diode structure according to claim 1,wherein the micro light emitting elements are transferred onto thetemporary substrate by the first transfer stamp after the light blockingstructures are transferred onto the temporary substrate by the secondtransfer stamp.
 5. The manufacturing method of the micro light emittingdiode structure according to claim 4, wherein the light blockingstructures further comprise a plurality of light blocking connectionlayers, and each of the light blocking connection layers connects eachof the micro light emitting elements and the light blocking layerslocated on two opposite sides of each of the micro light emittingelements.
 6. The manufacturing method of the micro light emitting diodestructure according to claim 1, wherein the connection layer is a partof a plurality of fixing structures, the fixing structures comprise aplurality of first fixing structures and a plurality of second fixingstructures, each of the first fixing structures covers the lightshielding layer and extends from an edge of the light shielding layer tocover an edge of the light blocking layer and is connected to thetemporary substrate, a first air gap is provided between the lightblocking layer and the temporary substrate, each of the second fixingstructures covers the respective micro light emitting element andextends from an edge of the respective micro light emitting element andis connected to the temporary substrate, and a second air gap isprovided between the respective micro light emitting element and thetemporary substrate.
 7. The manufacturing method of the micro lightemitting diode structure according to claim 1, wherein the lightblocking structures are transferred onto the temporary substrate by thesecond transfer stamp after the micro light emitting elements aretransferred onto the temporary substrate by the first transfer stamp,and a first height of each of the light blocking structures is greaterthan or equal to a second height of each of the micro light emittingelements.